Modelling DC characteristics of MOSFET
An empirical formula is presented for the current-voltage characteristics of the metal oxide semiconductor field effect transistor (MOSFET). The three parameters of the formula can be calculated easily from separate regions in the device DC characteristics without recourse to special electrical measurements or global curve-fitting techniques. By using this formula, the implementation of a new MOSFET model into the source code of Spice is feasible. � 1987.